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| BLF6G10S-45 Power LDMOS transistor Rev. 03 -- 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 28 PL(AV) (W) 1.0 Gp (dB) 23 D (%) 8 ACPR (dBc) -48.5[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: Average output power = 1.0 W Gain = 23 dB Efficiency = 8 % ACPR = -48.5 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 Symbol 1 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G10S-45 Description ceramic earless flanged package; 2 leads Version SOT608B Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 13 +150 225 Unit V V A C C 5. Thermal characteristics Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 12.5 W Typ 1.7 Unit K/W BLF6G10S-45_3 (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -- 20 January 2010 2 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 72 mA VDS = 28 V; ID = 430 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 3.6 A VGS = VGS(th) + 3.75 V; ID = 2.52 A Min 65 1.35 1.7 Typ 1.9 2.15 12.5 5 0.2 Max 2.35 2.7 1.4 140 Unit V V V A A nA S 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz; RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Gp RLin D ACPR Parameter power gain input return loss drain efficiency adjacent channel power ratio Conditions PL(AV) = 1.0 W PL(AV) = 1.0 W PL(AV) = 1.0 W PL(AV) = 1.0 W Min 21.8 5.5 7 Typ 23 9 8 Max 24.5 Unit dB dB % dBc -48.5 -45.5 7.1 Ruggedness in class-AB operation The BLF6G10S-45 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 350 mA; PL = 35 W (CW); f = 960 MHz. BLF6G10S-45_3 (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -- 20 January 2010 3 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 25 Gp (dB) 23 001aaf991 D 75 D (%) 60 21 Gp 45 19 30 17 15 15 0 10 20 30 40 PL (W) 0 50 VDS = 28 V; IDq = 350 mA; f = 960 MHz. Fig 1. 25 Gp (dB) 23 One-tone CW power gain and drain efficiency as functions of load power; typical values 001aaf992 70 D (%) 55 0 IMD (dBc) -30 001aaf993 D IMD3 IMD5 21 Gp 40 IMD7 25 -60 19 17 10 15 0 20 40 -5 60 80 PL(PEP) (W) -90 0 20 40 60 80 PL(PEP) (W) VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz. VDS = 28 V; IDq = 350 mA; f1 = 960 MHz; f2 = 960.1 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Intermodulation distortion as a function of peak envelope load power; typical values BLF6G10S-45_3 (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -- 20 January 2010 4 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 25 Gp (dB) (1) 001aaf994 16 D (%) 12 -40 ACPR (dBc) -45 001aaf997 Gp (1) (2) 23 (2) (1) 21 8 -50 (2) D 19 4 -55 17 20 24 28 0 32 36 PL(AV) (dBm) -60 20 24 28 32 36 PL(AV) (dBm) VDS = 28 V; IDq = 350 mA; f1 = 952.5 MHz; f2 = 957.5 MHz; carrier spacing 5 MHz. (1) f = 955 MHz. (2) f = 925 MHz. VDS = 28 V; IDq = 350 mA; carrier spacing 5 MHz. (1) f = 955 MHz. (2) f = 925 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 5. 2-carrier W-CDMA adjacent channel power ratio as function of average load power; typical values 8. Test information VGS C10 C9 R1 C11 C12 C13 C14 R3 C15 R2 F1 VDS C16 input 50 C1 C8 C7 output 50 C2 C3 C4 C6 C5 001aaf995 Fig 6. Test circuit for operation at 900 MHz BLF6G10S-45_3 (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -- 20 January 2010 5 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor - F1 R2 C10 C9 R1 C12 C13 C11 C14 C15 + C16 C1 C8 C2 C3 C6 C7 C4 C5 BLF6G10S-45 INPUTBOARD TP BLF6G10S-45 OUTPUTBOARD TP 001aaf996 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 7. Component layout for 920 MHz and 960 MHz test circuit for 2-carrier W-CDMA Table 8. List of components (see Figure 6 and Figure 7). All capacitors should be soldered vertically. Component C1 C2 C3 C4 C5 C6 C7 C8, C11, C14 Description Value [1] [1] [1] [1] [1] [1] [1] [1] [2] Remarks multilayer ceramic chip capacitor 3.0 pF multilayer ceramic chip capacitor 1 pF multilayer ceramic chip capacitor 6.2 pF multilayer ceramic chip capacitor 1.8 pF multilayer ceramic chip capacitor 1.0 pF multilayer ceramic chip capacitor 6.8 pF multilayer ceramic chip capacitor 6.8 pF multilayer ceramic chip capacitor 68 pF C9, C10, C12, C13 multilayer ceramic chip capacitor 330 nF; 50 V C15 C16 F1 Q3 R1 R2 [1] [2] multilayer ceramic chip capacitor 4.5 F; 50 V Electrolytic capacitor Ferrite SMD bead BLF6G10S-45 SMD resistor SMD resistor 220 F 4.7 ; 0.1 W 6.8 ; 0.1 W [2] Ferroxcube BDS 3/3/8.9-4S2 or equivalent American Technical Ceramics type 100B or capacitor of same quality. TDK or capacitor of same quality. BLF6G10S-45_3 (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -- 20 January 2010 6 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 9. Package outline Ceramic earless flanged package; 2 leads SOT608B D A F 3 D1 U1 A c 1 H U2 E1 E 2 b w1 A Q 0 scale 5 mm DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT mm inch A 4.62 3.76 b 7.24 6.99 c 0.15 0.10 D D1 E E1 F 1.14 0.89 H 15.75 14.73 Q 1.70 1.45 U1 U2 w1 0.51 10.21 10.29 10.21 10.29 10.01 10.03 10.01 10.03 10.24 10.24 9.98 9.98 0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403 0.020 0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.057 0.393 0.393 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION OUTLINE VERSION SOT608B ISSUE DATE 06-12-06 09-08-26 Fig 8. Package outline SOT608B (c) NXP B.V. 2010. All rights reserved. BLF6G10S-45_3 Product data sheet Rev. 03 -- 20 January 2010 7 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 10. Abbreviations Table 9. Acronym 3GPP CCDF CW DPCH LDMOS PAR PDPCH RF SMD VSWR W-CDMA Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Waveform Dedicated Physical CHannel Laterally Diffused Metal Oxide Semiconductor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Surface-Mount Device Voltage Standing-Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Release date 20100120 Data sheet status Product data sheet Change notice Supersedes BLF6G10S-45_2 Document ID BLF6G10S-45_3 Modifications: * * * * Section 1.1 "General description" lower frequency range extended to 700 MHz from 800 MHz. Section 1.2 "Features" lower frequency range extended to 700 MHz from 800 MHz. Section 1.3 "Applications" lower frequency range extended to 700 MHz from 800 MHz. Section 12 "Legal information" export control disclaimer added. Product data sheet Preliminary data sheet BLF6G10S-45_1 - BLF6G10S-45_2 BLF6G10S-45_1 20090210 20070223 BLF6G10S-45_3 (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -- 20 January 2010 8 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G10S-45_3 (c) NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -- 20 January 2010 9 of 10 NXP Semiconductors BLF6G10S-45 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 January 2010 Document identifier: BLF6G10S-45_3 |
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